Microelectronics is the foundation of innovations
The MERI corporation is constantly developing its technological portfolio and manufacturing techniques to create the opportunity to produce new types of integrated circuits.
01.01.1970
Molecular Electronics Research Institute developed new Electrically Erasable and Programmable Read Only Memory (EEPROM) cell for the microchips that are under mass production.
01.01.1970
The head of Molecular Electronics Research Institute (MERI) Academician of the Russian Academy of Sciences Gennady Krasnikov made a report on the actual situation and opportunities of national microelectronics industry at the meeting, which was held on March 20 by Russian President Vladimir Putin.
01.26.2018
January 24 a scientific seminar "Neuromorphic systems and its’ implementations" was held at the Molecular Electronics Research Institute (MERI) under the guidance of a member of the Presidium of the Russian Academy of Sciences (RAS), academician G. Krasnikov.

ABOUT COMPANY

JSC MERI (Molecular Electronics Research Institute) is the leading research center of the MERI Group as part of the industrial holding of OJSC RTI (AFK Sistema). The enterprises of the MERI Group form the unique and largest Russian complex for scientific and technological research in the field of micro and nanoelectronics including the development and production of semiconductor products. Currently, more than 400 high-skilled developing engineers are working at MERI.

Institute cooperates with more than 60 national and foreign scientific centers, technical universities and design centers: IMEC (Belgium), CEA-Leti (France), Technische Universiteit Delft (Netherlands), Ecole Speciale de Lausanne (Switzerland), Aselta ( France), Leland Stanford Junior University (USA), Mapper Lithography (Netherlands), etc.

MERI conducts researches and development programs for the Ministry of Industry and Trade of the Russian Federation, the Ministry of Education and Science of the Russian Federation, Federal Space Agency as well as proactive work for its own projects. The work is carried out with various Russian and foreign partners in the framework of programs for the development of the semiconductors, the manufacture of IC chips in the Foundry mode for partner enterprises.

Our advantages
Baseline technology
MERI possesses a number of technologies involving the use of non-volatile memory, which are required for the production of analog power management ICs, RFID chips, microprocessors and microcontrollers as well as for other types of ICs. MERI continuously develops its technological portfolio and its application in the production process to enable the manufacturing of new types of integrated circuits.
Researchers Training
MERI founded and maintains specialized departments in profession-oriented higher education institutes: the Moscow Institute of Physics and Technology (MIPT) and the National Research University "Moscow Institute of Electronic Technology" (MIET). MERI scientists carry out preparation of undergraduates, masters and postgraduates in the following specialties: microelectronics, solid-state electronics and microsystem equipment; systems of computer-aided design, as well as the technology and design of integrated circuits, etc. Specialized departments in the top Russian technology colleges provide a high HR potential for the Institute that allows it to successfully develop the existing manufacturing and technological line and develop fundamentally new areas of microelectronics.
Leading national school of sciences in microelectronics
MERI school of sciences was created by four academicians and two corresponding members of the Academy of Sciences of the USSR and the Russian Academy of Sciences, more than 100 candidates and 40 doctors of science, more than 50 laureates of State Awards of the USSR, of the Council of Ministers of the USSR and of the Russian Federation, including two Lenin Award Laureates. Over the years, more than 500 employees have been awarded with state awards. Today more than 400 specialists are engaged in MERI research and development including two academicians of the Russian Academy of Sciences (G. Y. Krasnikov and A. S. Bugaev), one corresponding member of the Russian Academy of Sciences (B. G. Gribov), 17 doctors of science and 48 candidates of sciences.
Full cycle of development based on national circuit engineering
MERI has experience in designing complex digital, analog and analog-digital ICs, memory chips of various types, power management and high-voltage ICs, RFID chips, and also in semi-integrated circuits programming. MERI possesses a portfolio of complexly-functional IP-cores by its own design that serve various purposes, including libraries of standard digital cells and input-output elements, memory blocks of various types, analog IPs, IP interfaces, etc. The use of fully home-produced IP cores provides needed level of hardware components security.
Fundamental research
MERI is engaged in fundamental research in the field of semiconductor physics.
Research engineers are developing technologies of electron multibeam lithography for the production of modern and next-generation VLSI as well as model elements of non-volatile, ferroelectric and magneto resistive memory based on new physical principles. In the field of functional electronics, MERI scientists are engaged in the construction of instrument-technology models for basic and advanced technologies, nanoelectronic components and the radiation effects. Company engineers conduct MEMS technology research based on silicon-ferroelectric heterostructures with a view to creating a wide range of sensors and accelerometers, develop 3D-assembly technologies for SiP-integration.
Unique technologies development
MERI develops technologies with 65nm, 45nm and 28nm design rules for a wide range of applications, as well as SOI technologies with design rules of 90-65 nm for integrated circuits requiring increased durability, high speed and low power consumption, designed for operation in extreme conditions including aerospace systems. Institute also develops technologies based on the integration of heterojunction SiGe basic technologies and CMOS for VLSIs operating in the microwave range and used in GPS/GLONASS, Bluetooth, Wi-Fi, WiMAX, LTE, fiber optic communication systems, digital television, RFID, car radars, etc.
Наши преимущества
Baseline technology
MERI possesses a number of technologies involving the use of non-volatile memory, which are required for the production of analog power management ICs, RFID chips, microprocessors and microcontrollers as well as for other types of ICs. MERI continuously develops its technological portfolio and its application in the production process to enable the manufacturing of new types of integrated circuits.
Researchers Training
MERI founded and maintains specialized departments in profession-oriented higher education institutes: the Moscow Institute of Physics and Technology (MIPT) and the National Research University "Moscow Institute of Electronic Technology" (MIET). MERI scientists carry out preparation of undergraduates, masters and postgraduates in the following specialties: microelectronics, solid-state electronics and microsystem equipment; systems of computer-aided design, as well as the technology and design of integrated circuits, etc. Specialized departments in the top Russian technology colleges provide a high HR potential for the Institute that allows it to successfully develop the existing manufacturing and technological line and develop fundamentally new areas of microelectronics.
Leading national school of sciences in microelectronics
MERI school of sciences was created by four academicians and two corresponding members of the Academy of Sciences of the USSR and the Russian Academy of Sciences, more than 100 candidates and 40 doctors of science, more than 50 laureates of State Awards of the USSR, of the Council of Ministers of the USSR and of the Russian Federation, including two Lenin Award Laureates. Over the years, more than 500 employees have been awarded with state awards. Today more than 400 specialists are engaged in MERI research and development including two academicians of the Russian Academy of Sciences (G. Y. Krasnikov and A. S. Bugaev), one corresponding member of the Russian Academy of Sciences (B. G. Gribov), 17 doctors of science and 48 candidates of sciences.
Full cycle of development based on national circuit engineering
MERI has experience in designing complex digital, analog and analog-digital ICs, memory chips of various types, power management and high-voltage ICs, RFID chips, and also in semi-integrated circuits programming. MERI possesses a portfolio of complexly-functional IP-cores by its own design that serve various purposes, including libraries of standard digital cells and input-output elements, memory blocks of various types, analog IPs, IP interfaces, etc. The use of fully home-produced IP cores provides needed level of hardware components security.
Fundamental research
MERI is engaged in fundamental research in the field of semiconductor physics.
Research engineers are developing technologies of electron multibeam lithography for the production of modern and next-generation VLSI as well as model elements of non-volatile, ferroelectric and magneto resistive memory based on new physical principles. In the field of functional electronics, MERI scientists are engaged in the construction of instrument-technology models for basic and advanced technologies, nanoelectronic components and the radiation effects. Company engineers conduct MEMS technology research based on silicon-ferroelectric heterostructures with a view to creating a wide range of sensors and accelerometers, develop 3D-assembly technologies for SiP-integration.
Unique technologies development
MERI develops technologies with 65nm, 45nm and 28nm design rules for a wide range of applications, as well as SOI technologies with design rules of 90-65 nm for integrated circuits requiring increased durability, high speed and low power consumption, designed for operation in extreme conditions including aerospace systems. Institute also develops technologies based on the integration of heterojunction SiGe basic technologies and CMOS for VLSIs operating in the microwave range and used in GPS/GLONASS, Bluetooth, Wi-Fi, WiMAX, LTE, fiber optic communication systems, digital television, RFID, car radars, etc.
Partners of the company
Tomsk State University (Tomsk, Russia)
TSMC (Taiwan)
SVCS Process Innovation s.r.o. (Brno, Czech Republic)
ASML Holding N.V. (Veldhoven, Nederland)
TOPPAN PHOTOMASK (Japan)
LAM RESEARCH (USA)