Education

"Investigation of the features of integrating Non-volatile FRAM elements with CMOS technology"
  • 2017 г.
  • Authors: O.M. Orlov,D.D. Voronov, R.A. Islamov, G.Ja. Krasnikov
  • Журнал - Russian Microelektronics magazine, 2017, volume 46, No. 5, page 353-358
The Charge Trap Density Evolution in Wake-up and Fatigue Modes of FRAM
  • 2017 г.
  • Authors: D.R. Islamov, O.M. Orlov, V.A.Gritsenko, G.Ja. Krasnikov
  • Журнал - ECS Transactions,2017, vol.80, Iss.1, pp.279-281
«Leakage currents mechanism in thin films of ferroelectric Hf0,5Zr0,5O2»
  • 2017 г.
  • Authors: D.R. Islamov, A.G. Chernikova, A.M. Markeev, T.V. Perevalov, V.A.Gritsenko, O.M. Orlov,
  • 33rd International Conference on the Physics of Semiconductors, IOP Conf.Series: journal of Physics, conf.series 864 (2017)
«Trap Density Evolution in FRAM:fromWake-up to Fatigue»
  • 2017 г.
  • Authors: D.R. Islamov, O.M. Orlov, V.A.Gritsenko, G.Ja. Krasnikov
  • NGC 2017 conference in Tomsk (конференция по микро- и наноэлектронике, фотонике и возобновляемой энергии) 18-22.09.2017г.
The study of electrophysical characteristics of SOI MOSFETs in the temperature range from -60 to 250 ° С
  • 2017 г.
  • Authors: Бенедиктов А.С., Шелепин Н.А., Игнатов П.В., Ключников А.С.
«Thick benzocyclobutene (BCB) films processing procedures for contaminations free pattern formation»
  • 2017 г.
  • Authors: G.Y. Krasnikov, O.P. Gushin, P.I. Kuznetcov, K.S. Esenkin
  • Тезисы доклада на конференции «MNE 2017», г. Брага, с. 58
«Cryogenic etching of porous low-k dielectrics in CF3Br and CF4 plasmas»
  • 2017 г.
  • Authors: A.Rezvanov, A.V. Miakonkikh, A.S. Vishnevskiy, K,V. Rudenko, M.R. Baklanov
  • Журнал Journal of Vacuum Science & Technology B, volume 35, Issue 2, p. 021204-1 - 021204-6, 2017г.
«Pore surface grafting of porous low-k dielectrics by selective polymers»
  • 2017 г.
  • Authors: Тезисы конференции «MRS 2017 Spring Meeting&Exibit» April 17-21, Phoenix, Arizona
«Experimental study of plasma-induced damage in cryogenic etching of porous low-k dielectrics in CF3Br and CF4»
  • 2016 г.
  • Authors: A.Rezvanov, A.V. Miakonkikh, K.V. Rudenko, A.S. Vishnevsky, E.S. Gornev, M.R. Baklanov
  • Тезисы конференции «MRS 2017 Spring Meeting&Exibit» April 17-21, Phoenix, Arizona
Mechanism of charge transport of stress induced leakage current and trap nature in thermal oxide on silicon
  • 2016 г.
  • Authors: Damir R.Islamov, V. A. Gritsenko, T. V. Perevalov, O. M. Orlov, G.Ya. Krasnikov
  • 33 rd International conference on the Physics of Semiconductors, 2016.7.31-2016.8.5 , ICPS 2016, Beijing, China, Mo-P.020, c.86
Charge transport mechanism of stress induced leakage current in thermal silicon oxide
  • 2016 г.
  • Authors: D.R. Islamov, V.A. Gritsenko, T.V. Perevalov, O.M. Orlov, G.Ya. Krasnikov
  • Журнал ECS Transactions 75(5) 2016, 57-62
«Nature of traps responsible for the memory effect in silicon nitride»
  • 2016 г.
  • Authors: V. A. Gritsenko, T. V. Perevalov, O. M. Orlov, G. Ya. Krasnikov
  • Журнал - Applied physics letters 109, 062904 (2016) doi: 10. 1063/1.4959830 Стр. 1- 4
«The charge transport mechanism and electron trap nature in thermal oxide on silicon»
  • 2016 г.
  • Authors: Damir R.Islamov, Vladimir A. Gritsenko, Timofey V. Perevalov, Oleg M. Orlov, Gennady Ya. Krasnikov
  • Журнал - Applied physics letters 109, 052901 (2016) doi: 10. 1063/1.4960156. Стр. 1- 4
Directions of preparation of students, masters and postgraduates
  • Microelectronics and solid state electronics
  • Microsystem technology
  • Computer aided design
  • Nanotechnology in Electronics
New technologies
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  • microelectronics and solid state electronics