MERI scientist Askar Rezvanov was awarded RAS medal for his scientific research

According to the Russian Academy of Science (RAS) Presidium Decree, Askar Rezvanov, a production engineer of the MERI technological design department, was awarded the Medal and the Prize of RAS for Young Scientists for his research work “The research and development of the integration technology for VLSI interlayer insulation”.
Askar Rezvanov’s research project was presented at the annual RAS competition for young scientists in the category “Developing and creating elements, methods, technologies and products of scientific and applied value”. In 2018 young scientists had sent over 700 projects for the RAS contest.

The work is aimed at improving the performance of the integrated circuits created with a 14 nm topology or less. It could be achieved by using certain metals or porous dielectrics as well as various treatment methods aimed at reducing the materials damage by etching and thermal processing.

Askar started the research several years ago as a part of his bachelor thesis work. Askar along with his supervisors Oleg Guschin (1943-2018) and Evgeny Gornev worked on implementing of highly porous dielectrics in VLSI manufacturing, particularly, on creating new integration methods for such materials and cellular automation model development to discover the oxygen plasma effects on the dielectric properties. According to the author, this issue has become particularly relevant lately, when the size of the chips elements is constantly decreasing but it is necessary to improve their performance.

The research results were presented in more than 10 reports at national and international conferences, as well as at the RAS scientific session “New materials with specified features and high purity nanomaterials for hardware elements of data-computing and control systems”.

The research works were conducted in collaboration with scientists from MERI, Institute of Physics and Technology RAS, MIREA — Russian Technological University and Lomonosov Moscow State University.


1)    Rezvanov A.A., Gushchin O.P., Gornev E.S. Krasnikov G.Y., Mogilnikovв К.P., Chang L., Marneffe J.-F., Dussarat К., Baklanov М.R. Isobars of adsorption of fluorocarbon compounds selected for cryogenic plasma etching of low-k dielectrics // Electronic technics, series 3, microelectronics. – 2015. – V. 1. – № 157. – P. 49.
2)    Rezvanov A., Matyushkin I.V., Gushchin O.P., Gornev E.S. Modelling the dynamics of the integral dielectric permittivity of a porous low-k organosilicate film during the dry etching of a Photoresist in O2 Plasma // Russian Microelectronics. – 2018. – V. 47. – № 6. – P. 415 – 426.
3)    Rezvanov A., Miakonkikh A.V., Vischnevskiy A.S., Rudenko K.V., Baklanov M.R. Cryogenic etching of porous low-k dielectrics in CF3Br and CF4 plasmas // Journal of Vacuum Science & Technology B. – 2017. – V. 35. – № 2. – P. 021204.
4)    Rezvanov A., Zhang L., Watanabe M., Krishtab M.B, Zhang L., Hacker N., Verdonck P., Armini S., Marneffe J.-F. Pore surface grafting of porous low-k dielectrics by selective polymers // Journal of Vacuum Science & Technology B. – 2017. – V. 35. – № 2. – P. 021211.

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