Academic Seminar “Fundamental issues of non-volatile resistive memory for neuromorphic systems” was held at Kotelnikov Institute of Radio Engineering and Electronics, RAS

On June 19 Academic Council of ONIT RAS “Fundamental problems of hardware component database for the Information, computing and control systems and materials for its development” held the Seminar “Fundamental issues of non-volatile resistive memory for neuromorphic systems” managed by the Academic Council Chairman, RAS academician Gennady Krasnikov and the Academic Council deputy chairman, RAS corresponding member Vladimir Lukichev. The Seminar took place at Kotelnikov Institute of Radio Engineering and Electronics, RAS.

In the opening speech MERI’s general director, RAS academician Gennady Krasnikov, the director of the Institute of Physics and Technology, RAS corresponding member Vladimir Lukichev and Kotelnikov Institute of Radio Engineering and Electronics’ director, RAS corresponding member Sergey Nikitov stressed the importance of searching the ways to improve non-volatile resistive memory as a component for neuromorphic systems.   

83 members and 25 organizations took part in Academic Seminar session, including MERI; Kotelnikov Institute of Radio Engineering and Electronics, RAS; Lomonosov MSU; Institute of Physics and Technology, RAS; MIPT; Bauman MSTU etc.

9 reports were discussed:

1)      Physicochemical resistive switching methods applied in semiconductor layers for artificial synaptic structures creation. Sc.D. Alexey Belov, Sc.D. Lidia Pavlova, M.Sc. Anton Stroganov (National Research University of Electronic Technology (MIET)

2)      Different approaches to the creation of oxide resistive memory: filamentary and non-filamentary switching mechanisms. M.Sc. Andrey Markeev, Konstantin Egorov, Dmitry Kuzmichev, Yuriy Lebedinskiy, Maxim Zhuk, Dmitriy Negrov, MSc. Andrey Zenkevich (MIPT), RAS academician Gennady Krasnikov, Sc.D. Evgeniy Gornev, M.Sc. Oleg Orlov (MERI).

3)      The need, opportunities and development prospects for resistive NVM: deep dive. Sc.D. Sergei Koveshnikov (Institute of Microelectronics Technology and High Purity Materials, RAS).

4)      Temperature effect on conductive channels formation in memristor structures. Sc.D. Andrey Aleshin (Institute of Ultra high Frequency Semiconductor Electronics, RAS).

5)      Laser synthesis of memristor structures based on transition metals oxides (V, Nb, Ta) in crossbar array and their implementation in basic hardware elements for neuromorphic systems: neuristor and synaptor. Sc.D. Oleg Novodvorskiy (ILIT RAS — Branch of FSRC “Crystallography and Photonics” RAS)

6)      Multi-layers memristive element based on nanogranular magnetic composite with embedded oxide layer: switching methods, atomic phase role in insulating matrix. M.Sc. Vyacheslav Demin (National Research Center “Kurchatov Institute”), Sc.D. Alexander Sitnikov (Voronezh State Technical University)

7)      Physical and technological foundations of NVM elements with the multifunctional devices combination in one chip, based on ferroelectricity and spintronics principles for neuromorphic systems. M.Sc. Maria Morozova (MIPT).

8)      Neural network synapses creation based on memristors and FeFET transistors. M.Sc. Michail Tarkov, Sc.D. Vladimir Popov, Sc.D. Ida Tyschenko (ISP SB RAS).

9)      Machine learning methods application for creating highly reliable memristors and neural-like systems on their basis.

Sc.D. Evgeniy Gornev (MERI JSC), Dmitriy Zhevnenko (MIPT, MERI JSC). 

The reports discovered the research status of NVM improving in order to create the hardware elements for neuromorphic systems that will help to plan the further development of Russian microelectronics.

The participants underlined that it is important to improve their approaches in NVM development in order to create hardware elements base of neuromorphic systems for the information-computing and control systems providing the technological independence of the State.

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It was also recommended to create a new section for neuromorphic systems researches within the Academic Counsil. The scientific secretary of the Council Oleg Telminov is supposed to prepare the proposals concerning the section’s structure and to introduce it to the Council Bureau .Moreover it was proposed to have a look at the results of current scientists’ researches that were discussed at the seminar in a period of one year. 

It was proposed to take part in the 1^st International Conference "Mathematical Modeling in Materials Science of Electronic Components", which will be held October, 21 - 23at the Federal Research Center for Computer Science and Control, RAS.

The reports that had presented at the seminar are recommended for publishing in “Microelectronics” and "Electronic Engineering. Series 3: Microelectronics" journals (under the editorship of G. Krasnikov).

  

In conclusion the Deputy Chairman of the Scientific Council, Corresponding Member of the Russian Academy of Sciences, Director of the Institute of Physical and Technical Problems Vladimir Lukichev underlined the high level of the reported scientific results and expressed confidence in strengthening cooperation between organizations in terms of improving non-volatile resistive memory to create the hardware elements for neuromorphic systems.